The Hall effect is the most fundamental electromagnetic effect and is the basis for a wide variety of sensors. It was discovered in 1879 by Edwin Hall while studying the flow of electricity through a metal plate. The Hall effect is the movement of charge carriers in a conductor in a magnetic field. The force on the charge carriers is perpendicular to both the magnetic field and the direction of the current. The magnitude of the force is proportional to the strength of the magnetic field and the amount of current flowing through the conductor.
Why Hall effect is used?
The Hall effect is used in a variety of applications, including:
-Sensors: The Hall effect can be used to detect the presence of a magnetic field, making it ideal for use in sensors.
-Actuators: The Hall effect can be used to control the flow of electric current, making it useful for applications such as electric motors.
-Power supplies: The Hall effect can be used to regulate the flow of electricity in power supplies.
-Data storage: The Hall effect can be used to store data in magnetic media.
What is the formula of Hall effect? The Hall effect is a phenomenon in which a voltage difference is generated across an electrical conductor in a magnetic field when the conductor is placed in the magnetic field perpendicular to the direction of the current flowing through it. The magnitude of the voltage difference is proportional to the strength of the magnetic field and the amount of current flowing through the conductor. What is the unit of Hall coefficient? The unit of Hall coefficient is Tesla meter squared per Coulomb.
What is the formula for Hall voltage?
The Hall voltage, V_H, is given by:
V_H = R_H B I
Where R_H is the Hall coefficient, B is the magnetic field, and I is the current.
What is a Hall effect device? A Hall effect device is a semiconductor device that is used to measure the strength and direction of a magnetic field. The device consists of a thin film of semiconductor material that is placed between two electrodes. When a magnetic field is applied to the device, the electrons in the semiconductor material are forced to move in a direction perpendicular to the direction of the field. This movement of electrons produces a voltage difference between the two electrodes, which can be used to measure the strength and direction of the magnetic field.